View IRHY54034CM_688607.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 93825D
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
Product Summary
Part Number Radiation Level RDS(on) IRHY57034CM 100K Rads (Si) 0.04 IRHY53034CM 300K Rads (Si) IRHY54034CM 500K Rads (Si) IRHF58034CM 1000K Rads (Si) 0.04 0.04 0.048
IRHY57034CM JANSR2N7483T3 60V, N-CHANNEL
REF: MIL-PRF-19500/702
5
TECHNOLOGY
ID QPL Part Number 18A* JANSR2N7483T3 18A* JANSF2N7483T3 18A* JANSG2N7483T3 18A* JANSH2N7483T3
International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
TO-257AA
Features:
n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page 18* 18* 72 75 0.6 20 110 18 7.5 10 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
300 (0.063in./1.6mm from case for 10sec) 4.3 (Typical)
www.irf.com
1
04/26/06
IRHY57034CM, JANSR2N7483T3
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
60 -- -- 2.0 16 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.057 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.04 4.0 -- 10 25 100 -100 45 10 15 25 100 35 30 -- V V/C V S( ) A
Test Conditions
VGS = 0V, I D = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 18A A VDS = VGS, ID = 1.0mA VDS 15V, IDS = 18A A VDS=48V ,VGS=0V VDS = 48V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, I D = 18A VDS = 30V VDD = 30V, ID = 18A, VGS =12V, RG = 7.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = 25V f = 1.0MHz
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
1152 535 42
-- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 18* 72 1.2 99 322
Test Conditions
A
V ns nC Tj = 25C, IS = 18A, VGS = 0V A Tj = 25C, IF = 18A, di/dt 100A/s VDD 25V A
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC RthJA Junction-to-Case Junction-to-Ambient
Min Typ Max
-- -- -- -- 1.67 80
Units
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier web site. For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHY57034CM, JANSR2N7483T3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source A On-State Resistance (TO-3) Static Drain-to-Source A On-State Resistance (TO-257AA) Diode Forward Voltage A Up to 500K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max 60 2.0 -- -- -- -- -- -- -- 4.0 100 -100 10 0.044 0.04 1.2 60 1.5 -- -- -- -- -- -- -- 4.0 100 -100 25 0.053 0.048 1.2 V nA A V
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS, I D = 1.0mA VGS = 20V VGS = -20 V VDS =48V, VGS =0V VGS = 12V, ID = 18A VGS = 12V, ID = 18A VGS = 0V, IS = 18A
1. Part numbers IRHY57034CM ( JANSR2N7483T3 ) , IRHY53034CM ( JANSF2N7483T3 ) and IRHY54034CM ( JANSG2N7483T3 ) 2. Part number IRHY58034CM ( JANSH2N7483T3 )
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Br Xe Au LET (MeV/(mg/cm2)) 37.3 63 86.6 Energy (MeV) 285 300 2068 VDS (V) Range (m) @VGS =0V @VGS= -5V @VGS= -10V @VGS=-15V @VGS=-20V 36.8 60 60 60 60 40 29 46 46 35 25 15 106 35 35 27 20 14
70 60 50 40 30 20 10 0 0 -5 -10 VGS -15 -20
Br I Au
For footnotes refer to the last page
www.irf.com
VDS
Fig a. Single Event Effect, Safe Operating Area
3
IRHY57034CM, JANSR2N7483T3
Pre-Irradiation
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
1000
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
100
10
1
5.0V
10
5.0V
0.1 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
1 0.1 1
20s PULSE WIDTH TJ = 150 C
10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
TJ = 25 C
100
RDS(on) , Drain-to-Source On Resistance (Normalized)
22A ID = 18A
I D , Drain-to-Source Current (A)
2.0
1.5
TJ = 150 C
1.0
10
0.5
1 5 7 9
V DS =15 25V 20s PULSE WIDTH 11 13 15
0.0 -60 -40 -20
VGS = 12V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
4
www.irf.com
Pre-Irradiation
IRHY57034CM, JANSR2N7483T3
2500
2000
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 18A 22A VDS = 48V VDS = 30V VDS = 12V
C, Capacitance (pF)
15
1500
Ciss
1000
10
Coss
500
5
Crss
0 1 10 100
0 0 10 20
FOR TEST CIRCUIT SEE FIGURE 13
30 40
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
ISD , Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
TJ = 150 C
10
OPERATION IN THIS AREA LIMITED BY R DS(on)
100
TJ = 25 C
100s 10 1ms Tc = 25C Tj = 150C Single Pulse 1 1 10 100 1000 VDS , Drain-toSource Voltage (V)
1
0.1 0.4
V GS = 0 V
0.6 0.8 1.0 1.2 1.4
10ms
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
www.irf.com
5
IRHY57034CM, JANSR2N7483T3
Pre-Irradiation
35
LIMITED BY PACKAGE
30
VDS VGS RG
RD
D.U.T.
+
ID , Drain Current (A)
25 20 15 10 5 0 25 50 75 100 125 150
-V DD
V GS
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
VDS 90%
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
www.irf.com
Pre-Irradiation
IRHY57034CM, JANSR2N7483T3
EAS , Single Pulse Avalanche Energy (mJ)
200
15V
ID 8.0A 11.4A BOTTOM 18A TOP
150
VDS
L
DRIVER
RG
D.U.T.
IAS tp
+ - VDD
100
VGS 20V
A
0.01
50
Fig 12a. Unclamped Inductive Test Circuit
0
25
50
75
100
125
150
V(BR)DSS tp
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
www.irf.com
7
IRHY57034CM, JANSR2N7483T3
Pre-Irradiation
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = 50V, starting TJ = 25C, L= 0.7 mH Peak IL =18A, V GS =12V A I SD 18A, di/dt 234A/s, VDD 60V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 48 volt VDS applied and V GS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- TO-257AA
6 %%Ab#!d #!Ab# d AAAAAAA"' Ab $d "YA AAAAAAA"$%Ab #d $'Ab!d #'"Ab (d "Ab$d #Ab#$d '(Ab"$d
"%"Ab$"&d ""(Ab$!&d ! "
%'(Ab%%$d %"(Ab%#$d
(!Ab#"d #!Ab# d
7
8 $''Ab%!$d !&Ab$d
& Ab!'d H6Y
!$#Ab d !Y
AAAAAAAAAAAA''Ab"$d "YA AAAAAAAAAAAA%#Ab!$d A$Ab!dA 8 6A 7
"$Ab !d
IPU@T) AA9DH@ITDPIDIBAEAUPG@S6I8DIBAQ@SA6ITDA #$H ((# !AA8PIUSPGGDIBA9DH@ITDPI)ADI8C "AA9DH@ITDPITA6S@ATCPXIADIAHDGGDH@U@STAbDI8C@Td #AAPVUGDI@A8PIAPSHTAUPAE@9@8APVUGDI@AUP!$&66
PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/2006
8
www.irf.com

▲Up To Search▲

Price & Availability of IRHY54034CM

	To Download IRHY54034CM Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .